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NTMD4820N
TYPICAL PERFORMANCE CURVES
1300
1200
1100
1000
900
800
700
600
500
400
C iss
C oss
T J = 25 ° C
V GS = 0 V
10
9
8
7
6
5
4
3
V DS
Q GS
Q GD
QT
V GS
20
16
12
8
300
200
100
0
0
C rss
5 10
15
20
25
30
2
1
0
0
2
4
6
8
10
12
I D = 7.5 A
T J = 25 ° C
14
4
0
16
1000
DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V DD = 10 V
I D = 1 A
V GS = 15 V
3
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage vs. Total Charge
V GS = 0 V
T J = 25 ° C
100
10
t d(off)
t f
t r
t d(on)
2
1
1
1
10
100
0
0.3
0.4
0.5
0.6
0.7
0.8
100
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10 m s
75
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I D = 11 A
10
100 m s
1 ms
50
1
0.1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
10 ms
dc
25
THERMAL LIMIT
0.01
0.1
PACKAGE LIMIT
1
10
100
0
25
50 75 100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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